Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor

Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor

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A tensile-strained GeSn/SiGeSn multiple quantum well (MQW) laser wrapped in Si3N4 liner stressor is designed and characterized theoretically.A biaxial tensile anal-lube strain is introduced into the GeSn/SiGeSn MQW laser by the Si3N4 liner stressor.The boosting effects of tensile strain on the threshold current density Jth and optical gain in GeSn/SiGeSn lasers are attributed to the modulation of energy band structure and copyright distribution in the GeSn wells.Tensile-strained Ge0.

90Sn0.10/Si0.161Ge0.695Sn0.

144 MQW laser return wrapped in 500 nm Si3N4 liner stressor achieves a Jth reduction from 476 to 168 A/cm2 and a significant enhancement of optical gain, as compared to the relaxed control device without Si3N4.The design of GeSn/SiGeSn MQW structure wrapped in Si3N4 liner stressor provides a practical way to realize high performance GeSn based mid-infrared laser.